Weight |
0.01 kg
|
Case |
TO3 |
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Vbr CBO |
160 |
Vbr CEO |
160 |
Max. PD (W) |
150 |
Max. hFE |
140 |
Min hFE |
40 |
Ic Max. (A) |
15 |
@Ic (test) (A) |
2.0 |
Icbo Max. @Vcb Max. (A) |
100u |
Polarity |
NPN |
Derate Above 25°C |
1.2 |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
150 W |
Maximum Collector-Base Voltage |Vcb| |
180 V |
Maximum Collector-Emitter Voltage |Vce| |
160 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
15 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
700 pF |
Transition Frequency (ft): |
3 MHz |
Forward Current Transfer Ratio (hFE), MIN |
40 |
SKU |
81316 |