2SD427S

SKU: 2SD427S

2SD427S Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Equivalent	2SD427
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	80
Max. hFE	140
Min hFE	40
Ic Max. (A)	8.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	640m
Trans. Freq (Hz) Min.	7.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	400 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	585439

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