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2SD458
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2SD458

SKU: 2SD458
2SD458 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Datasheet
2SD458 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 600
Vbr CEO 400
Max. PD (W) 80
Max. hFE 50
Min hFE 6.5
Ic Max. (A) 5.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 1.0m+
Polarity NPN
R(sat) (Û) 300m
Derate Above 25°C 640m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 6.5
SKU 346069
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