| Equivalent | 2SD470 | |
| Type | Transistor Silicon NPN | |
| Case | TO66 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 1.6k | |
| Vbr CEO | 700 | |
| Max. PD (W) | 15 | |
| t(f) Max. (S) | 1.3u | |
| Max. hFE | 6.0 | |
| Min hFE | 2.0 | |
| Ic Max. (A) | 1.5 | |
| @Ic (test) (A) | 1.0 | |
| Icbo Max. @Vcb Max. (A) | 30u | |
| Polarity | NPN | |
| R(sat) (Û) | 2.5 | |
| Derate Above 25°C | 272m | |
| Oper. Temp (°C) Max. | 135 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 15 W | |
| Maximum Collector-Base Voltage |Vcb| | 1600 V | |
| Maximum Collector-Emitter Voltage |Vce| | 70 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 1 A | |
| Max. Operating Junction Temperature (Tj) | 130 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 1.5 | |
| SKU | 550805 | |