The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD510
View detailed images (1)

2SD510

SKU: 2SD510
2SD510 Transistor Silicon NPN CASE: MT11 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case MT11
Manufacturer Mitsubishi
Vbr CBO 150
Vbr CEO 140
Max. PD (W) 625
Min hFE 10
Ic Max. (A) 250
@Ic (test) (A) 150
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Tr Max. (s) 5.0u
Derate Above 25°C 5.0
Trans. Freq (Hz) Min. 500k
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 625 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 250 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 760311
Back