2SD511

SKU: 2SD511

2SD511 SemiConductor - Case: MT11 Make: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	MT11
Manufacturer	Mitsubishi
Vbr CBO	90
Vbr CEO	80
Max. PD (W)	625
Min hFE	10
Ic Max. (A)	250
@Ic (test) (A)	200
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	NPN
Tr Max. (s)	5.0u
Derate Above 25°C	5.0
Trans. Freq (Hz) Min.	500k
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	625 W
Maximum Collector-Base Voltage \|Vcb\|	90 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	250 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	760309

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