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2SD513
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2SD513

SKU: 2SD513
2SD513 Transistor Silicon NPN CASE: MT11 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case MT11
Manufacturer Mitsubishi
Vbr CBO 130
Vbr CEO 120
Max. PD (W) 625
Min hFE 10
Ic Max. (A) 250
@Ic (test) (A) 200
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Tr Max. (s) 5.0u
Derate Above 25°C 5.0
Trans. Freq (Hz) Min. 500k
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 625 W
Maximum Collector-Base Voltage |Vcb| 130 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 250 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 760307
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