2SD517

SKU: 2SD517

2SD517 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	1.5k
Vbr CEO	700
Max. PD (W)	16
t(f) Max. (S)	1.1u
Max. hFE	10
Min hFE	3.0
Ic Max. (A)	5.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	400m
Oper. Temp (°C) Max.	135
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	16 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Collector-Emitter Voltage \|Vce\|	700 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	130 °C
Forward Current Transfer Ratio (hFE), MIN	3
SKU	115441

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