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2SD52
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2SD52

SKU: 2SD52
2SD52 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Fujitsu
Vbr CBO 100
Vbr CEO 55
Max. PD (W) 80
Max. hFE 40
Min hFE 10
Ic Max. (A) 6.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 500m
Derate Above 25°C 533m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 760301
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