2SD520

SKU: 2SD520

2SD520 Transistor - Case: TO3 Make: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Mitsubishi
Vbr CEO	400
Max. PD (W)	100
Max. hFE	1.5k
Min hFE	200
Ic Max. (A)	7.0
@Ic (test) (A)	4.5
Icbo Max. @Vcb Max. (A)	500u
Mat.	Silicon Logic
Polarity	NPN
R(sat) (Û)	250m
Derate Above 25°C	800m
@VCE (test)	2.0
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-38
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	350
SKU	552041

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