2SD521
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2SD521

SKU: 2SD521
2SD521 Transistor Silicon NPN CASE: TO3 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Mitsubishi
Vbr CEO 550
Max. PD (W) 100
Max. hFE 1.2k
Min hFE 200
Ic Max. (A) 8.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 1.0m
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 200m
Derate Above 25°C 800m
@VCE (test) 1.5
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-38
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 700 V
Maximum Collector-Emitter Voltage |Vce| 550 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 200
SKU 552042
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