The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD523
View detailed images (13)

2SD523

SKU: 2SD523
2SD523 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Datasheet
2SD523 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CEO 60
Max. PD (W) 50
Min hFE 1.0k
Ic Max. (A) 7.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity NPN
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-38
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 2000
SKU 346072
Back