| Weight |
0.01 kg
|
| Case |
TO220 |
| Type |
Transistor Silicon NPN |
| Manufacturer |
Toshiba |
| Vbr CBO |
80 |
| Vbr CEO |
80 |
| Max. PD (W) |
30 |
| Max. hFE |
240 |
| Min hFE |
40 |
| Ic Max. (A) |
4.0 |
| @Ic (test) (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
30u |
| Polarity |
NPN |
| Derate Above 25°C |
240m |
| Trans. Freq (Hz) Min. |
10M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
30 W |
| Maximum Collector-Base Voltage |Vcb| |
80 V |
| Maximum Collector-Emitter Voltage |Vce| |
80 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
4 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
160 pF |
| Transition Frequency (ft): |
3 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
16701 |