2SD528H

SKU: 2SD528H

2SD528H Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CEO	600
Max. PD (W)	100
Min hFE	350
Ic Max. (A)	8.0
@Ic (test) (A)	6.0
Icbo Max. @Vcb Max. (A)	5.0u
Mat.	Silicon Logic
Polarity	NPN
R(sat) (Û)	200m
Derate Above 25°C	800m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-38
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	600 V
Maximum Emitter-Base Voltage \|Veb\|	15 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	350
SKU	590785

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