The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD530
View detailed images (1)

2SD530

SKU: 2SD530
2SD530 Transistor Silicon NPN CASE: TO41 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO41
Manufacturer Fujitsu
Vbr CEO 80
Max. PD (W) 50
Min hFE 750
Ic Max. (A) 10
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1.0m
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 200m
t(stor) Max. (S) 1.1u-
Derate Above 25°C 333m
@VCE (test) 5.0
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 4-45
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 750
SKU 540218
Back