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2SD536
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2SD536

SKU: 2SD536
2SD536 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Fujitsu
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 100
t(f) Max. (S) 800n
Max. hFE 120
Min hFE 10
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Tr Max. (s) 800n
R(sat) (Û) 300m
Derate Above 25°C 666m
Trans. Freq (Hz) Min. 27M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 13 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 540219
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