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2SD541
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2SD541

SKU: 2SD541
2SD541 Transistor Silicon NPN CASE: TO3A MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO3A
Manufacturer Fujitsu
Vbr CBO 200
Vbr CEO 150
Max. PD (W) 200
t(f) Max. (S) 1.5u
Max. hFE 70
Min hFE 8.0
Ic Max. (A) 30
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 3.0m
Polarity NPN
Tr Max. (s) 1.5u
R(sat) (Û) 133m
Derate Above 25°C 1.3
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 30 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 12 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 760282
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