2SD546

SKU: 2SD546

2SD546 Transistor Silicon NPN CASE: TO66 MAKE: Matsushita Electronics

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Matsushita Electronics
Vbr CBO	800
Vbr CEO	500
Max. PD (W)	30
Max. hFE	200
Min hFE	40
Ic Max. (A)	1.0
@Ic (test) (A)	20m
Icbo Max. @Vcb Max. (A)	300u
Polarity	NPN
R(sat) (Û)	6.0
Derate Above 25°C	240m
Trans. Freq (Hz) Min.	7.0M
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	800 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	549832

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