The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD553Y
View detailed images (12)

2SD553Y

SKU: 2SD553Y
2SD553Y Transistor Silicon NPN CASE: SOT78 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT78
Manufacturer Toshiba
Vbr CBO 70
Vbr CEO 50
Max. PD (W) 40
Max. hFE 240
Min hFE 120
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Polarity NPN
Tr Max. (s) 200n
Trans. Freq (Hz) Min. 10M
@VCE (V) 1.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 585447
Back