The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD576

2SD576

SKU: 2SD576
2SD576 Transistor Silicon NPN CASE: TO39 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Fujitsu
Vbr CBO 250
Vbr CEO 250
Max. PD (W) 800m
Derate (Amb) (W/°C) 5.3m
hfe 70
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 250 V
Maximum Collector-Emitter Voltage |Vce| 250 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 540222
Back