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2SD579
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2SD579

SKU: 2SD579
2SD579 Transistor Silicon NPN CASE: TO66 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Hitachi
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 40
Max. hFE 320
Min hFE 60
Ic Max. (A) 4.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
R(sat) (Û) 900m
Derate Above 25°C 320m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 60
SKU 542512
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