The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD58
View detailed images (12)

2SD58

SKU: 2SD58
2SD58 Transistor Silicon NPN CASE: SOT9 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case SOT9
Manufacturer Mitsubishi
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 20
Max. hFE 180
Min hFE 20
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 40u
Polarity NPN
Derate Above 25°C 160m
Trans. Freq (Hz) Min. 3.5M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 551836
Back