2SD580

SKU: 2SD580

2SD580 Transistor Silicon NPN CASE: TO8 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO8
Manufacturer	Fujitsu
Vbr CBO	60
Vbr CEO	50
Max. PD (W)	20
Min hFE	70-
Ic Max. (A)	1.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	20u
Polarity	NPN
R(sat) (Û)	2.0
Derate Above 25°C	133m
Trans. Freq (Hz) Min.	1.2
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	0.6 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	540223

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