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2SD587A
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2SD587A

SKU: 2SD587A
2SD587A Transistor Silicon NPN CASE: MT100 MAKE: NEC
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Datasheet
2SD587A Datasheet
Product specifications
Type Transistor Silicon NPN
Case MT100
Manufacturer NEC
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 70
Max. hFE 200
Min hFE 40
Ic Max. (A) 6.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Derate Above 25°C .56
Trans. Freq (Hz) Min. 17M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 4-33
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 130 pF
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 346079
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