The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD590
View detailed images (13)

2SD590

SKU: 2SD590
2SD590 Transistor Silicon NPN CASE: TO39 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Fujitsu
Vbr CBO 100
Vbr CEO 90
Max. PD (W) 1.0
t(f) Max. (S) 2.1u+
Min hFE 100-
Ic Max. (A) 2.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Tr Max. (s) 150n
R(sat) (Û) 240m
Derate Above 25°C 6.7m
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 90 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 200 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 540224
Back