The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD602
View detailed images (5)

2SD602

SKU: 2SD602
2SD602 Transistor Silicon NPN CASE: SOT23 MAKE: Matsushita Electronics
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • More pieces shipped in 14 days
?
Datasheet
2SD602 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Matsushita Electronics
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 200m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 2.0m
hfe 60
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code WQ_WR_WS
SKU 81327
Back