2SD604

SKU: 2SD604

2SD604 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CBO	180
Vbr CEO	180
Max. PD (W)	100
Max. hFE	3.2k
Min hFE	400
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
R(sat) (Û)	1.0
Derate Above 25°C	800m
Trans. Freq (Hz) Min.	8.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Collector-Emitter Voltage \|Vce\|	180 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	60 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	542513

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