2SD632

SKU: 2SD632

2SD632 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	350
Vbr CEO	300
Max. PD (W)	80
Max. hFE	250
Min hFE	50
Ic Max. (A)	4.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
R(sat) (Û)	1.5
Derate Above 25°C	640m
Oper. Temp (°C) Max.	140
@VCE (V)	15
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	350 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	50
SKU	549837

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