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2SD635
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2SD635

SKU: 2SD635
2SD635 Transistor Silicon NPN CASE: TO220 MAKE: Toshiba
Datasheet
2SD635 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 40
Max. hFE 15k
Min hFE 2.0k
Ic Max. (A) 7.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 800n
Derate Above 25°C 347m
Oper. Temp (°C) Max. 140
@VCE (V) 3.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 8000
SKU 346097
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