The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD636

2SD636

SKU: 2SD636
2SD636 Transistor Silicon NPN CASE: TO126 MAKE: Microsemi Corporation
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
Qty
  • 100 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2SD636 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Microsemi Corporation
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 400m
C(ob) (F) 3.5p
Derate (Amb) (W/°C) 3.6m
hfe 90
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
@VCE (test) (V) 10
Oper. Temp (°C) Max. 135
@Ic (A) 2.0m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 81330
Back