2SD639

SKU: 2SD639

2SD639 Transistor Silicon NPN CASE: SOT32 MAKE: Matsushita Electronics

Price:

£4.79 Inc. VAT (£3.99 Ex. VAT)

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Datasheet

2SD639 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT32
Manufacturer	Matsushita Electronics
Vbr CBO	60
Vbr CEO	50
Max. PD (W)	600m
C(ob) (F)	6.0p
Derate (Amb) (W/°C)	5.4m
hfe	60
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
@VCE (test) (V)	10
Oper. Temp (°C) Max.	135
@Ic (A)	10m
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.6 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	135 °C
Collector Capacitance (Cc)	6 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	86767

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