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2SD640
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2SD640

SKU: 2SD640
2SD640 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 600
Vbr CEO 400
Max. PD (W) 100
Max. hFE 140
Min hFE 25
Ic Max. (A) 7.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 1.0u
Derate Above 25°C 800m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1.5 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 584739
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