2SD645

SKU: 2SD645

2SD645 Transistor Silicon NPN CASE: TO3A-1 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3A-1
Manufacturer	Toshiba
Vbr CEO	450
Max. PD (W)	350
t(f) Max. (S)	5.0u
Min hFE	150
Ic Max. (A)	30
@Ic (test) (A)	30
Icbo Max. @Vcb Max. (A)	600u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	1.5u
t(stor) Max. (S)	9.0u
Derate Above 25°C	2.8
@VCE (test)	5.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	350 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	450 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	60 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	150
SKU	760205

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