| Equivalent | 2SD646 | |
| Type | Transistor Silicon NPN | |
| Case | TO3A-1 | |
| Manufacturer | Toshiba | |
| Vbr CEO | 450 | |
| Max. PD (W) | 400 | |
| t(f) Max. (S) | 5.0u | |
| Min hFE | 150 | |
| Ic Max. (A) | 50 | |
| @Ic (test) (A) | 50 | |
| Icbo Max. @Vcb Max. (A) | 1.0m | |
| Mat. | Silicon Logic | |
| Polarity | NPN | |
| Tr Max. (s) | 1.5u | |
| t(stor) Max. (S) | 8.0u | |
| Derate Above 25°C | 3.2 | |
| @VCE (test) | 5.0 | |
| Oper. Temp (°C) Max. | 150 | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 400 W | |
| Maximum Collector-Base Voltage |Vcb| | 600 V | |
| Maximum Collector-Emitter Voltage |Vce| | 450 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 100 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 150 | |
| SKU | 368895 | |