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2SD648A
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2SD648A

SKU: 2SD648A
2SD648A Transistor Silicon NPN CASE: TO3A-1 MAKE: Toshiba
Product specifications
Equivalent 2SD648
Type Transistor Silicon NPN
Case TO3A-1
Manufacturer Toshiba
Vbr CEO 300
Max. PD (W) 2.5k
t(f) Max. (S) 3.0u
Min hFE 100
Ic Max. (A) 400
@Ic (test) (A) 400
Icbo Max. @Vcb Max. (A) 10m
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 3.0u
R(sat) (Û) 6.3m
t(stor) Max. (S) 13u
Derate Above 25°C 25
Trans. Freq (Hz) Min. 300k
@VCE (test) 5.0
Oper. Temp (°C) Max. 125
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2500 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 400 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 100
SKU 760202
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