2SD657

SKU: 2SD657

2SD657 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Price:

£23.99 Inc. VAT (£19.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	50
Max. hFE	180
Min hFE	40
Ic Max. (A)	1.5
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Derate Above 25°C	400m
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	368897

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