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2SD658
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2SD658

SKU: 2SD658
2SD658 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Product specifications
Equivalent 2SD658H
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CBO 1.5k
Vbr CEO 600
Max. PD (W) 50
Max. hFE 60
Min hFE 6.0
Ic Max. (A) 5.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 7.0u
R(sat) (Û) 1.2
Derate Above 25°C 40m
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 600 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 6
SKU 760196
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