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2SD664
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2SD664

SKU: 2SD664
2SD664 Transistor Silicon NPN CASE: TO66 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Toshiba
Vbr CEO 80
Max. PD (W) 40
t(f) Max. (S) 2.5u
Max. hFE 15k
Min hFE 2.0k
Ic Max. (A) 7.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 100u
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 800n
R(sat) (Û) 500m
t(stor) Max. (S) 3.0u
Derate Above 25°C 320m
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-38
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 7000
SKU 584741
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