2SD665

SKU: 2SD665

2SD665 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Price:

£23.99 Inc. VAT (£19.99 Ex. VAT)

Qty

Datasheet

2SD665 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	150
Max. hFE	140
Min hFE	40
Ic Max. (A)	15
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	1.2
Trans. Freq (Hz) Min.	15M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	300 pF
Transition Frequency (ft):	6 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	82271

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