| 2SD666 Datasheet |
| Equivalent | 2SD666A | |
| Type | Transistor Silicon NPN | |
| Case | TO92L | |
| Manufacturer | Hitachi | |
| Vbr CEO | 80 | |
| Max. PD (W) | 900m | |
| hfe | 60 | |
| Ic Max. (A) | 50m | |
| Polarity | NPN | |
| Trans. Freq (Hz) Min. | 140M | |
| @VCE (test) (V) | 5.0 | |
| @Ic (A) | 10m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.9 W | |
| Maximum Collector-Base Voltage |Vcb| | 80 V | |
| Maximum Collector-Emitter Voltage |Vce| | 80 V | |
| Maximum Collector Current |Ic max| | 0.05 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Transition Frequency (ft): | 70 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| SKU | 86768 | |