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2SD669
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2SD669

SKU: 2SD669
2SD669 Transistor Silicon NPN CASE: TO126 MAKE: Hitachi
Price: £4.79
+ VAT 20% for UK purchases
£4.79
Qty
+ VAT 20% for UK purchases
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Datasheet
2SD669 Datasheet
Product specifications
Equivalent 2SD669D
Type Transistor Silicon NPN
Case TO126
Manufacturer Hitachi
Vbr CBO 180
Vbr CEO 120
Max. PD (W) 1.0
Max. hFE 320
Min hFE 60
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 160m
Trans. Freq (Hz) Min. 140M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 14 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 86514
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