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2SD669AB
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2SD669AB

SKU: 2SD669AB
2SD669AB Transistor Silicon NPN CASE: TO126 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Hitachi
Vbr CBO 180
Vbr CEO 160
Max. PD (W) 20
Max. hFE 120
Min hFE 60
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 160m
Trans. Freq (Hz) Min. 140M
Oper. Temp (°C) Max. 150
@VCE (V) 5
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 14 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 760184
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