2SD672

SKU: 2SD672

2SD672 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	300
Vbr CEO	300
Max. PD (W)	40
Max. hFE	330
Min hFE	60
Ic Max. (A)	1.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	NPN
R(sat) (Û)	6.2
Derate Above 25°C	400m
Trans. Freq (Hz) Min.	20M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	549838

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