2SD684A

SKU: 2SD684A

2SD684A Transistor Silicon NPN CASE: TO66 MAKE: Toshiba

Product specifications

Weight	0.05 kg
Equivalent	2SD684
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Toshiba
Vbr CEO	400
Max. PD (W)	30
t(f) Max. (S)	5.0u
Min hFE	600
Ic Max. (A)	6.0
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	500u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	1.0u
R(sat) (Û)	500m
t(stor) Max. (S)	8.0u
Derate Above 25°C	240m
@VCE (test)	2.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-38
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	35 pF
Forward Current Transfer Ratio (hFE), MIN	600
SKU	585451

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