2SD685

SKU: 2SD685

2SD685 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CEO	400
Max. PD (W)	100
t(f) Max. (S)	5.0u
Min hFE	400
Ic Max. (A)	10
@Ic (test) (A)	4.0
Icbo Max. @Vcb Max. (A)	500u
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	1.0u
R(sat) (Û)	250m
t(stor) Max. (S)	12u
Derate Above 25°C	800m
@VCE (test)	2.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-38
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	90 pF
Forward Current Transfer Ratio (hFE), MIN	400
SKU	395655

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