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2SD738
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2SD738

SKU: 2SD738
2SD738 Transistor Silicon NPN CASE: MT200 MAKE: Hitachi
Product specifications
Equivalent 2SD738A
Type Transistor Silicon NPN
Case MT200
Manufacturer Hitachi
Vbr CBO 160
Vbr CEO 160
Max. PD (W) 125
Max. hFE 200
Min hFE 35
Ic Max. (A) 12
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
R(sat) (Û) 500m
Derate Above 25°C 1.0
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 760141
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