2SD757

SKU: 2SD757

2SD757 Transistor Silicon NPN CASE: TO220 MAKE: Hitachi

Datasheet

2SD757 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Hitachi
Vbr CEO	160
Max. PD (W)	1.2
Min hFE	60
Ic Max. (A)	50m
@Ic (test) (A)	10m
Polarity	NPN
Trans. Freq (Hz) Min.	140M
@VCE (V)	5.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1.25 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	160 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	3.8 pF
Transition Frequency (ft):	140 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	346118

Back