2SD760

SKU: 2SD760

2SD760 Transistor Silicon NPN CASE: TO220 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Hitachi
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	25
Min hFE	35
Ic Max. (A)	2.0
@Ic (test) (A)	150m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
R(sat) (Û)	2.0
Derate Above 25°C	200m
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	180 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	115448

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