2SD766

2SD766

SKU: 2SD766
2SD766 Transistor Silicon NPN CASE: TO66 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Matsushita Electronics
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 30
Max. hFE 330
Min hFE 60
Ic Max. (A) 700m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
Derate Above 25°C 240m
Trans. Freq (Hz) Min. 45M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 135 °C
Transition Frequency (ft): 45 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 549845
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