2SD776

SKU: 2SD776

2SD776 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	200
Vbr CEO	180
Max. PD (W)	100
Max. hFE	2.0k
Min hFE	500
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	800m
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	180 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	500
SKU	584745

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